中文
English
------- Survive by quality, develop by service! ! !
Tel:+86 181 2376 9513
------- Survive by quality, develop by service! ! !
Tel:+86 181 2376 9513
• RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=3.5A
• Fast switching capability
• Avalanche energy tested
• Improved dv/dt capability, high ruggedness
DESCRIPTION
The F7N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors
Features
• RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=3.5A
• Fast switching capability
• Avalanche energy tested
• Improved dv/dt capability, high ruggedness
Mechanical data
• Case: ITO-220ABW
• pprox. Weight: 2.1g ( 0.07oz)
• Lead free finish, RoHS compliant
• Case Material: “Green” molding compound, UL flammability classification 94V-0,“Halogen-free”.
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER | Symbols | RATINGS | Units |
Drain-Source Voltage | VDSS | 650 | V |
Gate-Source Voltage | VGSS | ±30 | V |
Continuous Drain Current | ID | 7 | A |
Pulsed Drain Current (Note 2) | IDM | 14 | A |
Avalanche Energy Single Pulsed (Note 3) | EAS | 281.3 | mJ |
Peak Diode Recovery dv/dt (Note 4) | dv/dt | 2.3 | V/ns |
Power Dissipation | PD | 35 | W |
Operation Junction Temperature and Storage Temperature | Tj,Tstg | -55 ~ +150 | °C |
